February 15th, 2011

Kingston HyperX 1866Mhz

Kingston Hyper X 1866Mhz Review

Introduction

The introduction of Intel’s i7 platform coincided largely with the release of DDR3 memory bringing with it the prospect of triple channel setups. As a result, many memory kits have been produced specifically for the X58 motherboard generally of the order of 6GB (3 x 2GB). Typically, 1066MHz or 1333MHz DRAM has been used by the average users with higher frequencies seemingly classed as more “enthusiast” memory.

However, with the price of DDR3 memory dropping, the lure of higher frequencies for use in combination with the i7 920 or other i7 CPUs is becoming a little greater. This is magnified by the ability to push the frequencies to 1866MHz or 2000MHz by simply changing the divider allowing for quick and easy overclocking which, when combined with a clock of 3.8-4.0GHz (easily achievable on the i7 920), gives a very significant performance boost.

Kingston’s HyperX range has often been considered as the company’s headline memory act with its distinctive, flashy heat spreaders. This particular kit, KHX1866C9D3T1K3/6GX, is made up of three 2GB sticks each running at a stock speed of 1866MHz with CL9 timings. Let’s take a closer look.

Kingston on the HyperX Kit

“Kingston’s KHX1866C9D3T1K3/6GX is a kit of three 256M x 64-bit 2GB (2048MB) DDR3-1866MHz CL9 SDRAM (Synchronous DRAM) memory modules, based on sixteen 128M x 8-bit DDR3 FBGA components per module. Each module kit supports Intel® XMP (Extreme Memory Profiles). Total kit capacity is 6GB. Each module kit has been tested to run at DDR3-1866MHz at a low latency timing of 9-9-9 at 1.65V. The SPDs are programmed to JEDEC standard latency DDR3-1333MHz timing of 9-9-9 at 1.5V. Each 240-pin DIMM uses gold contact fingers and requires +1.5V.”

Features

  • JEDEC standard 1.5V ± 0.075V Power Supply
  • VDDQ = 1.5V ± 0.075V
  • 667MHz fCK for 1333Mb/sec/pin
  • 8 independent internal bank
  • Programmable CAS Latency: 5,6,7,8,9,10
  • Posted CAS
  • Programmable Additive Latency: 0, CL – 2, or CL – 1 clock
  • Programmable CAS Write Latency(CWL) = 7(DDR3-1333)
  • 8-bit pre-fetch
  • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4
  • which does not allow seamless read or write [either on the fly using A12 or MRS]
  • Bi-directional Differential Data Strobe
  • Internal (self) calibration: Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
  • On Die Termination using ODT pin
  • Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE . 95°C
  • Asynchronous Reset
  • PCB : Height 2.401” (61.00mm) w/ heatsink, double sided component

Specifications

  • CL(IDD): 9 cycles
  • Row Cycle Time (tRCmin): 49.5ns (min.)
  • Refresh to Active/Refresh Command Time (tRFCmin): 110ns
  • Row Active Time (tRASmin): 36ns (min.)
  • Power: 1.800 W (operating per module)
  • UL Rating: 94 V – 0
  • Operating Temperature: 0o C to 85o C
  • Storage Temperature: -55o C to +100o C

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Memory